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FF1200R17KP4_B2

FF1200R17KP4_B2


Product Id# FF1200R17KP4_B2


The showing price is slightly negotiable based on client’s interest, volume of order & long-term relationship between us.
In stock - 15 Units Delivery in WITHIN 3-4 Days

The FF1200R17KP4_B2 is an Infineon IHM-A IGBT module featuring Trench/Fieldstop IGBT4 technology with an Emitter Controlled diode

Description

The FF1200R17KP4_B2 is an Infineon IHM-A IGBT module featuring Trench/Fieldstop IGBT4 technology with an Emitter Controlled diode, rated at 1700 V and 1200 A nominal current. It is designed for high-power converters, medium-voltage drives, traction systems, and wind turbines.

Parameter Value
Manufacturer Infineon Technologies
Part Number FF1200R17KP4_B2
IGBT Technology Trench/Fieldstop IGBT4
Nominal Collector Current  1200 A
Peak Collector Current  2400 A
Collector-Emitter Voltage 1700 V
Operating Junction Temperature  up to 150 C
Diode Emitter Controlled, enlarged for regenerative operation
Isolation Voltage 4 kV AC, 1 min
Baseplate AlSiC (Aluminum Silicon Carbide) for high thermal cycling capability
Package IHM-A standard housing
Weight 1.5 kg (typical for this module class)


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