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Product Id# FF1200R17KP4_B2
The FF1200R17KP4_B2 is an Infineon IHM-A IGBT module featuring Trench/Fieldstop IGBT4 technology with an Emitter Controlled diode
The FF1200R17KP4_B2 is an Infineon IHM-A IGBT module featuring Trench/Fieldstop IGBT4 technology with an Emitter Controlled diode, rated at 1700 V and 1200 A nominal current. It is designed for high-power converters, medium-voltage drives, traction systems, and wind turbines.
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Part Number | FF1200R17KP4_B2 |
| IGBT Technology | Trench/Fieldstop IGBT4 |
| Nominal Collector Current | 1200 A |
| Peak Collector Current | 2400 A |
| Collector-Emitter Voltage | 1700 V |
| Operating Junction Temperature | up to 150 C |
| Diode | Emitter Controlled, enlarged for regenerative operation |
| Isolation Voltage | 4 kV AC, 1 min |
| Baseplate | AlSiC (Aluminum Silicon Carbide) for high thermal cycling capability |
| Package | IHM-A standard housing |
| Weight | 1.5 kg (typical for this module class) |
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